教授
博士生导师
硕士生导师
性别:男
毕业院校:山东大学
学历:研究生(博士后)
学位:博士
在职信息:在职
所在单位:新一代半导体材料研究院/微电子学院
入职时间:2017-07-03
学科:微电子学与固体电子学
办公地点:中心校区
联系方式:xums@sdu.edu.cn
电子邮箱:xums@sdu.edu.cn
访问量:
最后更新时间:..
-
[1]
胡秀飞.
Growth of 2-inch diamond films on 4H–SiC substrate by microwave plasma CVD for enhanced thermal performance.
VACUUM,
211,
2023.
-
[2]
陈思衡.
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing.
Solid-State Electronics,
213,
2024.
-
[3]
罗鑫.
Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors.
Journal of Physics and Chemistry of Solids,
187,
2024.
-
[4]
张斌.
The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode.
IEEE Transactions on Electron Devices,
2024.
-
[5]
李睿.
Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high in content.
Chinese Physics B,
30,
615-619,
2021.
-
[6]
Wang Xue-Song.
Internal quantum efficiency of InGaN/GaN multiple quantum well.
ACTA PHYSICA SINICA,
63,
127801-1-127801-7,
2014.
-
[7]
李建飞.
W-shaped injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate.
Optics Express,
25,
A871-A879,
2017.
-
[8]
葛磊.
Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer.
Crystals,
12,
2022.
-
[9]
王希玮.
Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition.
MATERIALS TODAY COMMUNICATIONS,
2022.
-
[10]
胡秀飞.
Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition.
MATERIALS TODAY COMMUNICATIONS,
2022.
-
[11]
徐明升.
A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor.
IEEE Electron Device Letters,
Vo.43,
1271,
2022.
-
[12]
刘磊.
Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN.
CRYSTENGCOMM,
23,
7245,
2021.
-
[13]
冀子武.
Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures.
Superlattices Microstruct,
2022.
-
[14]
屈尚达.
Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer.
Chin. Phys. B,
2022.
-
[15]
李睿.
Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*.
Chin. Phys. B,
30,
2021.
-
[16]
李睿.
Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures.
Superlattices and Microstructures,
160,
2021.
-
[17]
时凯居.
Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells.
Materials Express,
11,
2033,
2021.
-
[18]
刘东.
Thickness-dependent highly sensitive photodetection behavior of lead-free all-inorganic CsSnBr3 nanoplates.
RARE METALS Journal,
41,
1753,
2022.
-
[19]
刘磊.
Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN.
CrystEngComm,
7245,
2021.
-
[20]
杜路路.
High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO.
IEEE Transactions on Electron Devices,
40,
4326,
2018.
-
版权所有 ©山东大学 地址:中国山东省济南市山大南路27号 邮编:250100
查号台:(86)-0531-88395114
值班电话:(86)-0531-88364731 建设维护:山东大学信息化工作办公室
-
手机版
登录 | 山东大学